Residual stresses are crucial for the behavior and quality of materials and components. With our many years of experience and cutting-edge measurement technology, we can help you accurately determine, evaluate, and interpret residual stress conditions.
We offer a comprehensive range of residual stress measurement techniques — compliant with standards, highly precise, and tailored to your specific requirements.
X-ray residual stress analysis (lab & mobile) – standards-compliant and accredited results (including on-site).
Residual stress measurements using electron microscopy – high-precision stress analysis in the micro range.
Cut-compliance method – determination of residual stress depth profiles at greater depths.
Raman spectroscopy – optical, non-contact stress analysis with micrometre resolution; ideal for thin films and composite materials.
Residual stress measurements according to EN 15305 (X-ray diffraction / XRD)
Your benefit:
Applications:
X-ray determination of residual stresses, stress distributions, and depth profiles on components in the lab or directly at the customer’s site
Residual stress development in coating/substrate systems under changing temperatures
Determination of residual stress relaxation at elevated temperatures up to 900 °C
Determination of residual stresses within the component volume, especially at greater depths.
Determination of subsurface/depth stresses (mm–cm range)
Complements surface-based methods (e.g. X-ray)
Flexible use for various materials and component geometries
Validation of numerical stress analyses
Raman spectroscopy enables non-destructive analysis of the chemical composition and structure of materials with high spatial resolution. It provides valuable information on molecular bonds, stress states, and phase distributions that are critical for understanding materials science processes. Thanks to its versatility, the method is ideal for characterizing materials, thin films, and semiconductor structures in both research and industry.
Measurement of residual stresses and residual stress depth profiles in coatings with depth resolution down to 10 nm
Temperature-dependent residual stress measurements of microelectronic layers between –180 °C and +400 °C
2D residual stress distributions in crystalline materials with accuracy in the range of a few tens of nanometres, including dislocation density analysis
Residual stress depth profiles on machined sheets, wires, and other surfaces
